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| MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2--MOSV in One) MP4208 High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching * * * * * * -4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25C) Low drain-source ON resistance: RDS (ON) = 0.2 (typ.) Low leakage current: IGSS = 10 A (max) (VGS = 16 V) IDSS = -100 A (max) (VDS = -60 V) Enhancement-mode: Vth = -0.8 to -2.0 V (ID = -1 mA) Industrial Applications Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage Drain current Peak drain current Drain power dissipation (1-device operation, Ta = 25C) Drain power dissipation (4-device operation, Ta = 25C) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD PDT Tch Tstg Rating -60 20 -5 -10 2.0 4.0 150 -55 to 150 Unit V V A A W W C C JEDEC JEITA TOSHIBA 2-25A1D Weight: 2.1 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Array Configuration 1 2 4 6 8 10 3 5 7 9 Marking MP4208 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-10-27 MP4208 Thermal Characteristics Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Symbol Max Unit Rth (ch-a) 31.3 C/W This transistor is an electrostatic-sensitive device. Please handle withccaution. Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth |Yfs| RDS (ON) RDS (ON) Ciss Crss Coss tr VGS -10 V 50 0V Test Condition VGS = 16 V, VDS = 0 V VDS = -60 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -2.5 A ID = -2.5 A, VGS = -4 V ID = -2.5 A, VGS = -10 V VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = 0 V, f = 1 MHz Min -60 -0.8 1 VOUT 45 ns 55 Typ. 3 0.3 0.2 630 95 290 25 Max 10 -100 -2.0 0.5 0.3 Unit A A V V S pF pF pF ID = -2.5 A RL = 12 Turn-on time Switching time Fall time ton tf VDD -30 V VIN: tr, tf < 5 ns, duty 1%, tw = 10 s 200 Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd ID = -5 A, VGS = -10 V, VDD 48 V 22 16 6 nC nC nC Source-Drain Diode Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Peak drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = -5 A, VGS = 0 V IDR = -5 A, VGS = 0 V dIDR/dt = -50 A/s Min Typ. 1.0 80 0.1 Max -5 -10 2.0 Unit A A V ns C 2 2006-10-27 MP4208 ID - VDS -5 Common source Tc = 25C -4 -6 -10 -8 -3 -3 -2 -4 -3.5 -8 -8 -10 -10 -6 ID - VDS Common source -4 Tc = 25C Drain current ID (A) Drain current ID (A) -6 -3.5 -4 -3 -2 -2.5 VGS = -2 V -2 -4 -6 -8 -10 -1 -2.5 VGS = -2 V 0 0 -0.4 -0.8 -1.2 -1.6 -2 0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -10 VDS = -10 V 3 Tc = -55C -8 100 25 Common source Common source RDS (ON) - ID Drain-source on resistance RDS (ON) () Tc = 25C 1 0.5 0.3 VGS = -4 V -10 0.1 0.05 -0.1 Drain current ID (A) -6 -4 -2 -0.3 -1 -3 -10 -30 0 0 Drain current ID (A) -2 -4 -6 Gate-source voltage VGS (V) - -10 VDS - VGS Common source RDS (ON) - Tc () 1 Common source 0.8 -2.0 Tc = 25C -1.6 Drain-source voltage -1.2 Drain-source on resistance RDS (ON) VDS (V) 0.6 ID = -5 A -2.5 VGS = -4 V -1.2 ID = -5, -2.5, -1.2 A VGS = -10 V 0 -80 -40 0 40 80 120 160 -0.8 ID = -5 A -4 -3 0.4 -0.4 -2 -1 0.2 ) 0 0 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Case temperature 3 2006-10-27 MP4208 Vth - Tc |Yfs| (S) -2.0 30 Common source VDS = -10 V 10 |Yfs| - ID Vth (V) -1.6 Forward transfer admittance Tc = -55C 5 3 100 25 Gate threshold voltage -1.2 -0.8 1 0.5 0.3 -0.1 -0.3 -1 -3 -10 -30 -0.4 Common source VDS = -10 V ID = -1 mA 0 -80 -40 0 40 80 120 160 Drain current ID (A) Case temperature Tc (C) Dynamic Input/Output Characteristics -50 Common source ID = -5 A Tc = 25C VDS -30 -12 V -24 V VDD = -48 V -12 -20 5000 3000 Capacitance - VDS VDS (V) VGS (V) -40 -16 (pF) 1000 500 300 Common source 100 50 VGS = 0 V f = 1 MHz Tc = 25C -0.3 -1 -3 -10 -30 -100 Coss Ciss Drain-source voltage -20 -8 Gate-source voltage Capacitance C Crss -10 VGS -4 30 -0.1 0 0 8 16 24 32 0 40 Drain-source voltage VDS (V) Total gate charge Qg (nC) IDR - VDSF -30 Common source (A) -10 -5 -3 Tc = 25C Drain reverse current IDR -10 -3 -1 -0.5 -0.3 -1 VGS = 0, 1 V -0.1 0 0.4 0.8 1.2 1.6 2.0 Diode forward voltage VDSF (V) 4 2006-10-27 MP4208 rth - tw Transient thermal resistance rth (C/W) 300 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (1) 30 (3) (2) (4) 100 10 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation Circuit board (4) 4-device operation 0.01 0.1 1 10 100 1000 3 1 0.5 0.001 Pulse width tw (s) Safe Operating Area -20 8 PT - Ta (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board -10 IDP max PT (W) Total power dissipation 10 s* 6 -5 -3 ID max 10 ms* 100 ms* 1 ms* 100 s* 4 (4) (3) (2) Circuit board Drain current ID (A) 2 (1) -1 -0.5 -0.3 VDSS max *: Single nonrepetitive pulse -0.1 Ta = 25C Curves must be derated linearly with increase in temperature. -0.05 -3 -5 -10 -30 -50 -100 0 0 40 80 120 160 200 Ambient temperature Ta (C) Drain-source voltage VDS (V) Junction temperature increase Tj (C) Tj - PT 160 (1) 120 (2) (3) (4) 80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 1 2 3 4 5 0 0 Total power dissipation PT (W) 5 2006-10-27 MP4208 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-10-27 |
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